Shanghai Microsystems made a breakthrough in the preparation of graphene single crystals on the surface of boron nitride

A breakthrough in the study of single crystals of graphene prepared on the surface of boron nitride at Shanghai Microsystems

The Graphene Research Institute of the Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences achieved another major breakthrough. The State Key Laboratory of Information Functional Materials, Tang Shujie and others of the superconducting laboratory graphene research group have successfully achieved high orientation and rapid growth of graphene single crystals on hexagonal boron nitride surfaces through the introduction of a gaseous catalyst for the first time. The paper Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride was published on Nature Communications on March 11 (6:6499 doi: 10.1038/ncomms 7499 (2015)).

In 2011, the graphene team of Shanghai Microsystems Co., Ltd. started to conduct epitaxial growth of graphene single crystals on a hexagonal boron nitride substrate and its performance characterization, and achieved a series of results. They mastered graphene nucleation control (Carbon, 50, 329 (2012)) and determined orientation relationship between single crystal and substrate (Scientific Reports, 3, 2666, (2013)) based on acetylene as carbon source. , The innovative introduction of silane as a catalyst, the chemical vapor phase epitaxy method for the preparation of graphene crystal domain size of more than 20 microns single crystal growth rate than the previous report increased by two orders of magnitude, more than 90% of the graphene single crystal and The boron nitride substrate is strictly oriented, exhibiting a ~14 nm two-dimensional superlattice structure caused by Moiré fringes, and the typical room temperature Hall mobility of the prepared graphene exceeds 20,000 cm2/V·s.

Graphene is generally considered to be the most competitive electronic material for the continuation of Moore's Law in the post-silicon CMOS era due to its excellent electrical properties, superior thermal conductivity, and excellent mechanical properties. However, the electrical properties of graphene are greatly affected by the substrate, and the charge and phonon scattering greatly degrade the electrical properties of the graphene. Studies have shown that hexagonal boron nitride is an excellent substrate for graphene electronic devices due to its atomic leveling surface, no dangling bonds, and excellent insulating properties.

The graphene single crystal grown directly on the hexagonal boron nitride surface by chemical vapor deposition can avoid the interface contamination and damage defects caused by physical transfer, and provide a material basis for further application in the field of integrated circuits. However, due to the lack of catalytic ability of the substrate, the growth of graphene single crystals directly on the surface of hexagonal boron nitride dielectrics has been a huge problem in the entire graphene research field. The gaseous catalytic method proposed in this study has been patented and can provide a new idea and technical solution for the preparation of high-quality graphene single crystal thin films on dielectric substrates.

This work was funded by the major projects of the Ministry of Science and Technology, the Chinese Academy of Sciences and the Shanghai Municipal Science and Technology Commission.

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